Testing semiconductor components

ABSTRACT

A method of manufacturing a semiconductor package includes covering a semiconductor die and a plurality of conductive terminals coupled to the semiconductor die in a mold compound, positioning the mold compound between a first pair of electrodes and a second pair of electrodes, and moving a movable electrode of the first pair and a movable electrode of the second pair into a first clamping position. In the first clamping position, each of the first pair of electrodes and the second pair of electrodes electrically couples to a unique subset of the plurality of conductive terminals. The method also includes applying, by the first pair of electrodes, a first voltage to the semiconductor die within the mold compound; and applying, by the second pair of electrodes, a second voltage to the semiconductor die within the mold compound. The second voltage is less than the first voltage.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to U.S. Provisional PatentApplication No. 62/928,974, which was filed Oct. 31, 2019, is titled“TESTING SEMICONDUCTOR COMPONENTS,” and is hereby incorporated herein byreference in its entirety.

SUMMARY

In accordance with at least one example of the disclosure, a method ofmanufacturing a semiconductor package includes covering a semiconductordie and a plurality of conductive terminals coupled to the semiconductordie in a mold compound, positioning the mold compound between a firstpair of electrodes and a second pair of electrodes, and moving a movableelectrode of the first pair and a movable electrode of the second pairinto a first clamping position. In the first clamping position, each ofthe first pair of electrodes and the second pair of electrodeselectrically couples to a unique subset of the plurality of conductiveterminals. The method also includes applying, by the first pair ofelectrodes, a first voltage to the semiconductor die within the moldcompound; and applying, by the second pair of electrodes, a secondvoltage to the semiconductor die within the mold compound. The secondvoltage is less than the first voltage.

In accordance with another example of the disclosure, a system includesa first pair of electrodes and a second pair of electrodes configured toreceive a semiconductor die and a plurality of conductive terminalscoupled to the semiconductor die in a mold compound. Each of the firstand second pairs of electrodes includes a movable electrode. The movableelectrode of the first and second pairs of electrodes is configured tomove between an open position and a clamping position, and in theclamping position each of the first pair of electrodes and the secondpair of electrodes electrically couples to a unique subset of the firstplurality of conductive terminals. The first pair of electrodes isconfigured to apply a first voltage to the semiconductor die within themold compound, while the second pair of electrodes is configured toapply a second voltage to the semiconductor die within the moldcompound. The second voltage is less than the first voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

For a detailed description of various examples, reference will now bemade to the accompanying drawings in which:

FIG. 1a shows a perspective view of a system for high voltage isolationtesting of various devices during a manufacturing process for thosedevices in accordance with various examples;

FIGS. 1b-1e show side views of a system for high voltage isolationtesting of various devices during a manufacturing process for thosedevices in accordance with various examples;

FIG. 1f shows a top view of a system for high voltage isolation testingof various devices during a manufacturing process for those devices inaccordance with various examples;

FIGS. 2a-2c show various cross-sectional views of electrodes of thesystem in FIGS. 1a-1d in accordance with various examples;

FIGS. 2d and 2e show additional perspective views of electrodes inaccordance with various examples;

FIGS. 3a-3c show exemplary electric fields associated with the system inFIGS. 1a-1d in accordance with various examples; and

FIG. 4 shows a flow chart of a method for manufacturing a semiconductorpackage in accordance with various examples.

DETAILED DESCRIPTION

Electrical circuits are formed on semiconductor dies and subsequentlypackaged inside moldings (e.g., epoxy) to protect the circuits fromdamage due to elements external to the package, such as moisture, heat,and blunt force. To facilitate communication with electronics externalto the package, an electrical circuit within the package is electricallycoupled to conductive terminals. These conductive terminals arepositioned inside the package but are exposed to one or more externalsurfaces of the package. The portions of the conductive terminalsexposed to an external surface of a package are referred to as pins. Bycoupling the conductive terminals to electronics external to thepackage, a pathway is formed to exchange electrical signals between theelectrical circuit within the package and the electronics external tothe package via the conductive terminals.

Once a semiconductor die is packaged, the package is tested to ensureits compliance with various requirements. One such test is a highvoltage isolation test, in which high voltage circuitry of the packageddevice is isolated from low voltage circuitry of the packaged device.For example, a first group of pins of the packaged device are coupled toa high voltage circuit domain of the device while a second group of pinsof the packaged device are coupled to a low voltage circuit domain ofthe device. The pins coupled to the high voltage domain are shortedtogether and coupled to a high voltage source, while the pins coupled tothe low voltage domain are shorted together and coupled to a low voltagesource or to a ground node. The high voltage isolation test confirmsthat a packaged device provides isolation between a low voltage circuitdomain of the device and a high voltage circuit domain of the device,sufficient to satisfy a standard for the particular voltage level atwhich the packaged device will operate. In some examples, the highvoltage isolation test applies a much higher voltage to the packageddevice than the anticipated usage conditions of the packaged device, tofurther warrant reliability of the packaged device. In one example, ahigh voltage isolation test measures whether the packaged device canwithstand a sufficiently high voltage without arcing. The high voltageisolation test also measures whether the partial discharge of thepackaged device at a given applied voltage is less than a thresholdamount.

Handler sockets used to perform high voltage isolation testing ofteninclude support structures formed from dielectric materials, whichcreate undesirable electric field characteristics surrounding thepackaged device under test (DUT). As a result, the achievable voltagefor a high voltage test is limited and thus the DUT cannot be tested toits full potential due to charging of the dielectric support structuresand the non-uniform electric field generated around the dielectricsupport structures. Further, while handheld devices exist to performhigh voltage isolation testing with low, uniform electric fieldssurrounding the packaged DUT, these handheld devices are not conduciveto automation or testing DUTs at typical production speeds.

This disclosure describes various examples of a method of manufacturinga packaged semiconductor device. The manufacturing method includes atesting process in which a high voltage isolation test is performed onthe packaged device. The manufacturing method includes covering asemiconductor die and a plurality of conductive terminals in a moldcompound (e.g., epoxy). The mold compound is then positioned between afirst pair of electrodes and a second pair of electrodes, which are partof a system for high voltage isolation testing of various devices. Theelectrodes may be of various geometries as described further below.

During the testing process portion of the manufacturing method, amovable electrode of the first pair of electrodes and a movableelectrode of the second pair of electrodes are moved into a clampingposition, which causes electrical coupling between each of the firstpair of electrodes and the second pair of electrodes and some of theconductive terminals. For example, in the clamping position, a firstsubset of the conductive terminals are electrically coupled to the firstpair of electrodes, while a second subset, unique from the first subset,of the conductive terminals are electrically coupled to the second pairof electrodes. Once the first and second pairs of electrodes are in aclamping position, a first voltage is applied to the semiconductor dieby the first pair of electrodes, while a second voltage is applied tothe semiconductor die by the second pair of electrodes. The secondvoltage is lower than the first voltage and, in one example, the firstvoltage is in the range of 1-20 kV peak, and satisfies the requirementsof a high voltage isolation test of the semiconductor die and moldcompound during the manufacturing of the packaged semiconductor device.In an example, the second voltage is a voltage at a ground node.Additionally, as will be explained further below, the electrodes reducethe electric field surrounding the mold compound, or DUT, whileincreasing the uniformity of the electric field. Further, unlikedielectric support structures, the electrodes are not charged by theelectric field and thus do not reduce the voltage able to be applied tothe mold compound or DUT. As a result, the achievable voltage for a highvoltage test is increased relative to a test handler socket composed ofdielectric materials.

FIG. 1a depicts a system 100 for high voltage isolation testing ofvarious devices during a manufacturing process for those devices inaccordance with examples of this disclosure. The system 100 includes afirst pair of electrodes 102 and a second pair of electrodes 104.Although the first and second pairs of electrodes 102, 104 are depictedas generally circular, embodiments of this disclosure are not limited toa particular geometry. In this example, the first pair of electrodes 102is shown including an upper electrode 106 and a lower electrode 108,with a slot or space 110 formed there between. In an example, the secondpair of electrodes 104 includes an upper electrode 112 and a lowerelectrode 114, which are substantially identical to the first pair ofelectrodes 102 including upper and lower electrodes 106, 108. At leastone of the upper electrode 106 and the lower electrode 108 is movablerelative to the other of the upper and lower electrodes 106, 108 (e.g.,vertically or in the z-direction as shown in FIG. 1a ). The movable oneof the upper and lower electrodes 106, 108 may be referred to as amovable electrode, while the other of the upper and lower electrodes106, 108 may be either movable or stationary. In one example, the lowerelectrode 108 remains stationary, and thus is a stationary electrode,while the upper electrode 106 is configured to move toward and away fromthe lower electrode 108 (e.g., in the z-direction notated in FIG. 1a ),and thus is a movable electrode. In another example, the lower electrode108 is the movable electrode while the upper electrode 106 is thestationary electrode. In yet another example, both the upper and lowerelectrodes 106, 108 are movable toward and away from one another in thez-direction. The second pair of electrodes 104 are configured forsimilar movement relative to one another as the first pair of electrodes102 (e.g., in the z-direction). In yet other examples, one or both ofthe pairs of electrodes 102, 104 are additionally movable toward and/oraway from each other (e.g., in the y-direction notated in FIG. 1a ). Aswill be explained in further detail below, a semiconductor die and aplurality of conductive terminals coupled to the semiconductor die in amold compound 120 may be positioned between the first pair of electrodes102 and the second pair of electrodes 104 for high voltage isolationtesting of the mold compound 120. For example, conductive terminals orpins of the mold compound are positioned in the slot or space 110between the upper electrode 106 and the lower electrode 108 of the firstpair of electrodes 102, and similarly for the second pair of electrodes104.

FIG. 1b depicts a side view (e.g., along the y-direction) of the system100 of FIG. 1a , including a semiconductor die and a plurality ofconductive terminals coupled to the semiconductor die in a mold compound120. The second pair of electrodes 104 includes an upper electrode 112and a lower electrode 114, similar to the first pair of electrodes 102,as explained above. The mold compound 120 is positioned between thefirst pair of electrodes 102 and the second pair of electrodes 104. Inthis example, the conductive terminals of the mold compound 120 aredepicted as pins 122, 124 that extend from the mold compound 120. Themold compound 120 is positioned such that a first set of pins 122 reston the lower electrode 108 of the first pair of electrodes 102 while asecond set of pins 124 rest on a lower electrode 114 of the second pairof electrodes 104. In the examples of this disclosure, the width of themold compound 120 (including the pins) refers to the dimension of themold compound 120 in the x-direction. The width of the mold compound 120may vary, for example the mold compound 120 may be a narrow-body device,a wide-body device, or a device having a different width and/orthickness than standard narrow- or wide-body devices. Additionally, theheight of the pins 122, 124 refers to the dimension of the conductiveterminals of the mold compound 120 in the z-direction. The height of thepins 122, 124 may also vary.

For purposes of demonstration, in FIG. 1b , the first and second pairsof electrodes 102, 104 are in an open position. In the open position,one of the first pair of electrodes 102 (e.g., the upper electrode 106)is not in contact with the pins 122 of the mold compound 120. Similarly,one of the second pair of electrodes 104 (e.g., the upper electrode 112)is not in contact with the pins 124 of the mold compound 120. That is,the distance between the upper electrodes 106, 112 and the lowerelectrodes 108, 114 in the open position is greater than the height ofthe pins 122, 124. For example, with the pairs of electrodes 102, 104 inthe open position, the mold compound 120 may be positioned with the pins122, 124 resting on the upper-facing surface of the lower electrode 108,114 while the pins 122, 124 are not in contact with the upper electrodes106, 112.

Turning to FIG. 1c , the first and second pairs of electrodes 102, 104are in a clamping position. Once the mold compound 120 is placed on thelower electrodes 108, 114 as explained above, the movable electrodes (inthis example, the upper electrodes 106, 112) move toward the stationaryelectrodes (in this example, the lower electrodes 108, 114) in thez-direction to a position such that the pins 122, 124 of the moldcompound 120 are electrically coupled to the first pair of electrodes102 and the second pair of electrodes 104, respectively. In particular,the pins 122 are electrically coupled to the upper electrode 106 and thelower electrode 108 of the first pair of electrodes 102 while the pins124 are electrically coupled to the upper electrode 112 and the lowerelectrode 114 of the second pair of electrodes 104.

Referring to FIGS. 1b and 1c , a jig 130 is coupled to the upperelectrode 106, while a jig 132 is coupled to the upper electrode 112. Inone example, the jigs 130, 132 are substantially similar. The jigs 130,132 facilitate the upper electrodes 106, 112 as movable electrodes. Forexample, although not depicted in FIGS. 1b and 1c , movement of the jigs130, 132 (and thus the coupled upper electrodes 106, 112, respectively)may be facilitated by various well-understood structures, such assolenoids, electric motors, drivetrains, guiderails or guide tracks, andthe like. In another example, the jigs 130, 132 are instead coupled tothe lower electrodes 108, 114 while the upper electrodes 106, 112 arestationary. In yet another example where all electrodes are movable,jigs are coupled to both the lower electrodes 108, 114 and the upperelectrodes 106, 112.

As explained above, since at least one of each of the first and secondpairs of electrodes 102, 104 is movable in the z-direction, the system100 is able to accommodate mold compounds 120 having pins or conductiveterminals of varying heights or thicknesses by varying the position ofthe moving electrode(s) 106, 108, 112, 114 when in the clampingposition. For example, where the lower electrodes 108, 114 arestationary as in the example of FIGS. 1b and 1c , while the upperelectrodes 106, 112 move toward and away from the lower electrodes 108,114, a mold compound 120 having thicker conductive terminals or pins isaccommodated by increasing the distance between the upper electrodes106, 112 and the lower electrodes 108, 114 when moving from an openposition to a clamping position. Similarly, a mold compound 120 havingless thick conductive terminals or pins is accommodated by decreasingthe distance between the upper electrodes 106, 112 and the lowerelectrodes 108, 114 when moving from an open position to a clampingposition. For example, referring to FIG. 1c , a distance 134 between theupper electrodes 106, 112 and the respective lower electrodes 108, 114when in the clamping position varies depending on the height of theconductive terminals or pins of a particular mold compound 120. Thus, inan example, in a first clamping position, the distance 134 between theupper electrodes 106, 112 and the respective lower electrodes 108, 114is a first value. Continuing this example, in a second clampingposition, the distance 134 between the upper electrodes 106, 112 and therespective lower electrodes 108, 114 is a second value.

Once the first and second pairs of electrodes 102, 104 are in a clampingposition, a first voltage is applied to the mold compound 120 by thefirst pair of electrodes 102, while a second voltage is applied to themold compound 120 by the second pair of electrodes 104. The secondvoltage is lower than the first voltage and, in one example, the firstvoltage is in the range of 1-20 kV peak and satisfies the requirementsof a high voltage isolation test of the mold compound 120 during themanufacturing of a packaged semiconductor device. In an example, thesecond voltage is a voltage at a ground node. Additionally, the firstand second pairs of electrodes 102, 104 reduce the electric fieldsurrounding the mold compound 120, or DUT, while increasing theuniformity of the electric field. In particular, in the clampingposition the first and second pairs of electrodes 102, 104 contact themold compound 120 along its sides (e.g., the sides containing the pins122, 124), increasing the free space around the mold compound 120, whichdoes not introduce electric field enhancements. As a result, theachievable voltage for a high voltage test is increased relative to atest handler socket composed of dielectric materials, which often occupymore area around an exemplary mold compound 120 or DUT and reduce thevoltage able to be applied to the mold compound 120 or DUT.

After the first and second voltages are applied by the first and secondpairs of electrodes 102, 104, respectively, the first and second pairsof electrodes 102, 104 are moved to an open position (e.g., as shown bythe first and second pairs of electrodes 102, 104 in FIG. 1b ) and themold compound 120 is removed from between the first and second pairs ofelectrodes 102, 104. Subsequently, a second mold compound 120 may beplaced between the first and second pairs of electrodes 102, 104 in theopen position, and the process described with respect to FIGS. 1a-1crepeated with the second mold compound 120 (e.g., moving the movableelectrode(s) of the first and second pairs of electrodes 102, 104 to aclamping position and applying first and second voltages to the secondmold compound 120). The second mold compound 120 may have conductiveterminals or pins of a different thickness than the first, original moldcompound 120. In an example where the thickness of conductive terminalsor pins of subsequent mold compounds 120 differs, the distance 134between the upper electrodes 106, 112 and the lower electrodes 108, 114in the clamping position may be adjusted from one mold compound 120 tothe next, as explained above.

FIG. 1d shows an alternate example of the system 100, in whichcantilever pins contact the pins 122, 124 of the mold compound 120rather than the first and second pairs of electrodes 102, 104themselves. However, for the purposes of this disclosure, the term“electrode” is not limited to a particular physical structure; rather“electrode” refers to both a physical structure (e.g., the first andsecond pairs of electrodes 102, 104) as well as any ancillary structurethat is electrically coupled to such a physical structure. For example,in FIG. 1d , the cantilever pin 107 is coupled to the upper electrode106; the cantilever pin 109 is coupled to the lower electrode 108; thecantilever pin 113 is coupled to the upper electrode 112; and thecantilever pin 115 is coupled to the lower electrode 114. Thus, in FIG.1d , the cantilever pins 107, 109, 113, 115 are considered part of theelectrodes 106, 108, 112, 114, respectively. Further, in FIG. 1d , thecantilever pins 107, 109, 113, 115 are in an open position, in which thecantilever pins 107, 113 do not contact the pins 122, 124, respectively.In FIG. 1e , the cantilever pins 107, 109, 113, 115 are in a clampingposition, in which the cantilever pins 107, 113 are also in contact withthe pins 122, 124, respectively.

In some examples, the system 100 of FIGS. 1a-1e also includes a pick-uphead, for example that is part of a turret-type device handler. Thepick-up head is configured to position a mold compound 120 between thefirst and second pairs of electrodes 102, 104, to move the mold compound120 as needed (e.g., re-position), and to remove the mold compound 120from between the first and second pairs of electrodes 102, 104 aftertesting of the mold compound 120 has been completed. In this way, thesystem 100 may be used for manufacturing a packaged semiconductor devicewith production-speed testing (e.g., using a turret-type devicehandler).

FIG. 1f shows a top view of the system 100 of FIGS. 1a-1e (e.g., viewedalong the z-direction), including a pick-up head 140, which in oneexample is part of a turret-type device handler used for moving andotherwise manipulating the mold compound 120. In examples, the pick-uphead 140 is configured to grasp or otherwise fasten itself to the moldcompound 120 (e.g., using suction) and manipulate the position of themold compound 120. In these examples, the pick-up head 140 places themold compound 120 between the first and second pairs of electrodes 102,104. For example, the pins 122, 124 of the mold compound 120 rest on thelower electrodes 108, 114 of the first and second pairs of electrodes102, 104, while the upper electrodes 106, 112 of the first and secondpairs of electrodes 102, 104 do not contact the pins 122, 124. Thepick-up head 140 may then release the mold compound 120 while themovable electrodes (e.g., the upper electrodes 106, 112 in the exampleof FIG. 1b ) are moved into a clamping position. After a high voltageisolation test of the mold compound 120 is performed, the pick-up head140 is configured to again grasp or otherwise fasten itself to the moldcompound 120, for example to remove the mold compound 120 from betweenthe first and second pairs of electrodes 102, 104 in preparation formanufacturing another semiconductor package.

FIG. 2a shows a top view of the first and second pairs of electrodes102, 104 (e.g., viewed along the z-direction of FIGS. 1a-1c ). In theexample of FIG. 2a , the first pair of electrodes 102 includes an innerface 202, while the second pair of electrodes 104 includes an inner face204. The inner faces 202, 204 face toward each other and, although notshown in FIG. 2a , it should be understood that the mold compound 120 isplaced between the inner faces 202, 204 for high voltage isolationtesting, as explained above. In FIG. 2a , a top-view profile of theinner face 202 of the first pair of electrodes 102 and the inner face204 of the second pair of electrodes 104 is a Borda profile. As a resultof the profile of the inner faces 202, 204 being a Borda profile, auniform electric field is generated between two facing electrodes, suchas the first and second pairs of electrodes 102, 104.

FIG. 2b shows another top view of the first and second pairs ofelectrodes 102, 104 (e.g., viewed along the z-direction of FIGS. 1a-1c). In the example of FIG. 2b , the first pair of electrodes 102 includesan inner face 202, while the second pair of electrodes 104 includes aninner face 204. The inner faces 202, 204 face toward each other and,although not shown in FIG. 2b , it should be understood that the moldcompound 120 is placed between the inner faces 202, 204 for high voltageisolation testing, as explained above. In FIG. 2b , a top-view profileof the inner face 202 of the first pair of electrodes 102 and the innerface 204 of the second pair of electrodes 104 is a Rogowski profile. Asa result of the profile of the inner faces 202, 204 being a Rogowskiprofile, a uniform electric field is generated between two facingelectrodes, such as the first and second pairs of electrodes 102, 104.

FIG. 2c shows yet another top view of the first and second pairs ofelectrodes 102, 104 (e.g., viewed along the z-direction of FIGS. 1a-1c). In the example of FIG. 2c , the first pair of electrodes 102 includesan inner face 202, while the second pair of electrodes 104 includes aninner face 204. The inner faces 202, 204 face toward each other and,although not shown in FIG. 2c , it should be understood that the moldcompound 120 is placed between the inner faces 202, 204 for high voltageisolation testing, as explained above. In the example of FIG. 2c , theshape of each of the first and second pairs of electrodes 102, 104 iscylindrical or semi-cylindrical with the rounded portion facing inwardtoward the other pair of electrodes (e.g., the flat portion of thesemi-cylinders faces outward). In FIG. 2c , a top-view profile of theinner face 202 of the first pair of electrodes 102 and the inner face204 of the second pair of electrodes 104 is that of a cylinder orsemi-cylinder having rounded edges. In one example, the profile of theinner faces 202, 204 is a curvilinear profile. For example, the profileof the inner face 202 includes a linear section 206 toward the middle ofthe inner face 202 and curved sections 208 a, 208 b toward the ends ofthe inner face 202. The inner face 204 has a similar profile. As aresult of the profile of the contacting faces 108, 110 being acurvilinear profile, known electric field lines are generated around themold compound 120 or DUT, which electric field can thus be controlled byaltering the radius of the inner faces 202, 204 or in the curvilinearexample, the radius of the curved sections 208 a, 208 b.

FIG. 2d shows another view of the first and second pairs of electrodes102, 104, continuing the example of FIG. 2c in which the first andsecond pairs of electrodes 102, 104 are generally cylindrical, with theprofile of the inner faces 202, 204 being a curvilinear profile. Forexample, a cross-section of the first and second pairs of electrodes102, 104 taken in the y-direction is generally circular, while across-section of the first and second pairs of electrodes 102, 104 takenin the x-direction is generally rectangular. Further, as explained abovewith respect to FIG. 2c , the profile of the inner faces 202, 204includes a linear section 206, in this case in the region of contactwith the mold compound 120, in addition to a curved region 208 a towardthe edge of the inner faces 202, 204 (with a corresponding curved regionat the other edge of the inner faces 202, 204, not shown in this view).In another example, the first and second pairs of electrodes 102, 104are generally semi-cylindrical, with a rounded portion of thesemi-cylinder facing toward the mold compound 120 and a flat portion ofthe semi-cylinder facing away from the mold compound 120.

FIG. 2e shows another view of the example of FIG. 2d , which furtheremphasizes the curvilinear profile of inner faces 202, 204. For example,the inner face 202 profile of the first pair of electrodes 102 includesa linear section 206, in this case in the region of contact with themold compound 120, in addition to a curved regions 208 a, 208 b towardthe edges of the inner faces 202. The inner face 204 profile of thesecond pair of electrodes 104 is similar.

FIG. 3a shows a top view (e.g., from the z-direction of FIGS. 1a-1e ) ofan exemplary electrical field 300 surrounding the first and second pairsof electrodes 102, 104. Notably, the electrical field 300 is relativelyuniform surrounding the first and second pairs of electrodes 102, 104.

FIG. 3b also shows a top view (e.g., from the z-direction of FIGS. 1a-1e) of an exemplary electrical field 310 surrounding the first and secondpairs of electrodes 102, 104 where a mold compound 120 has beenpositioned between the first and second pairs of electrodes 102, 104.Notably, the electrical field 310 is relatively uniform surrounding theelectrodes 102, 104 and also relatively low on the electrodes 102, 104and the mold compound 120 itself.

FIG. 3c shows a side view (e.g., from the y-direction of FIGS. 1a-1e )of an exemplary electrical field 320 surrounding the first and secondpairs of electrodes 102, 104 where a mold compound 120 has beenpositioned between the first and second pairs of electrodes 102, 104.Notably, the electrical field 320 is concentrated around the moldcompound 120, rather than the edges of supporting structures and otherdielectric interfaces. For example, the electrical field 320 is notconcentrated around the first and second pairs of electrodes 102, 104.

FIG. 4 shows a flow chart of a method 400 for manufacturing asemiconductor package in accordance with examples of this disclosure.The method 400 begins in block 402 with covering a semiconductor die anda plurality of conductive terminals coupled to the semiconductor die ina mold compound. At this stage of the manufacturing process, the moldcompound 120 explained above is produced. The method 400 continues inblock 404 with positioning the mold compound 120 between a first pair ofelectrodes and a second pair of electrodes (e.g., the first and secondpairs of electrodes 102, 104 explained above). In an example, thepositioning is effected by a pick-up head 140, which may be part of aturret-type device handler. During positioning of the mold compound 120,the first and second pairs of electrodes 102, 104 are in an openposition, in which at least one of the first pair of electrodes 102 andone of the second pairs of electrodes 104 is not in contact with themold compound 120, for example the pins 122, 124 of the mold compound120. That is, the distance between the upper electrodes 106, 112 and thelower electrodes 108, 114 in the open position is greater than theheight or thickness of the pins 122, 124 of the mold compound 120. Forexample, with the first and second pairs of electrodes 102, 104 in theopen position, the mold compound 120 may be positioned with the pins 122contacting the lower electrode 108, while the pins 124 are contactingthe lower electrode 114. The pins 122, 124 do not contact the upperelectrodes 106, 112 in the open position.

The method 400 continues in block 406 with moving a movable electrode ofthe first pair of electrodes 102 and a movable electrode of the secondpair of electrodes 104 into a clamping position. In the clampingposition, each of the first pair of electrodes 102 and the second pairof electrodes 104 is electrically coupled to some of the conductiveterminals (e.g., pins 122, 124) of the mold compound 120. For example,in the clamping position, a first subset of the conductive terminals(e.g., pins 122) are electrically coupled to the first pair ofelectrodes 102, while a second subset, unique from the first subset, ofthe conductive terminals (e.g., pins 124) are electrically coupled tothe second pair of electrodes 104.

The method 400 then continues in block 408 with applying a first voltageto the semiconductor die within the mold compound 120 by the first pairof electrodes 102. The method 400 further continues in block 410 withapplying a second voltage to the semiconductor die within the moldcompound 120 by the second pair of electrodes 104. The second voltage islower than the first voltage and, in one example, the first voltage isin the range of 1-20 kV peak, and satisfies the requirements of a highvoltage isolation test of the semiconductor die and mold compound duringthe manufacturing of the packaged semiconductor device. In an example,the second voltage is a voltage at a ground node.

After applying the first and second voltages in blocks 408, 410, themethod 400 may optionally continue with moving the first and secondpairs of electrodes 102, 104 back into an open position and removing thefirst mold compound 120 from the lower electrodes 108, 114 (e.g., againusing the pick-up head 140). The method 400 may then be repeated withsubsequent semiconductor dies in mold compounds 120. In some examples,the mold compounds 120 manufactured according to the method 400 may havedifferent widths and/or heights or thickness of conductive terminals.For mold compounds 120 having different widths, the space between thefirst and second pairs of electrodes (e.g., in the x-direction) may bemodified. Additionally or alternately, for mold compounds 120 havingdifferent height or thickness of conductive terminals, the distance 134between the upper electrodes 106, 112 and the lower electrodes 108, 114in the clamping position may vary from one mold compound 120 to anothermold compound 120.

In the foregoing discussion and in the claims, the terms “including” and“comprising” are used in an open-ended fashion, and thus should beinterpreted to mean “including, but not limited to . . . .” Also, theterm “couple” or “couples” is intended to mean either an indirect ordirect connection. Thus, if a first device couples to a second device,that connection may be through a direct connection or through anindirect connection via other devices and connections. Similarly, adevice that is coupled between a first component or location and asecond component or location may be through a direct connection orthrough an indirect connection via other devices and connections. Anelement or feature that is “configured to” perform a task or functionmay be configured (e.g., programmed or structurally designed) at a timeof manufacturing by a manufacturer to perform the function and/or may beconfigurable (or re-configurable) by a user after manufacturing toperform the function and/or other additional or alternative functions.The configuring may be through firmware and/or software programming ofthe device, through a construction and/or layout of hardware componentsand interconnections of the device, or a combination thereof.Additionally, uses of the phrases “ground” or similar in the foregoingdiscussion are intended to include a chassis ground, an Earth ground, afloating ground, a virtual ground, a digital ground, a common ground,and/or any other form of ground connection applicable to, or suitablefor, the teachings of the present disclosure. Unless otherwise stated,“about,” “approximately,” or “substantially” preceding a valuemeans+/−10 percent of the stated value.

The above discussion is meant to be illustrative of the principles andvarious embodiments of the present disclosure. Numerous variations andmodifications will become apparent to those skilled in the art once theabove disclosure is fully appreciated. It is intended that the followingclaims be interpreted to embrace all such variations and modifications.

1-15. (canceled)
 16. A method of manufacturing a semiconductor package,the method comprising: covering a first semiconductor die and a firstplurality of conductive terminals coupled to the first semiconductor diein a first mold compound; positioning the first mold compound between afirst pair of electrodes and a second pair of electrodes; moving amovable electrode of the first pair and a movable electrode of thesecond pair into a first clamping position, wherein in the firstclamping position each of the first pair of electrodes and the secondpair of electrodes electrically couples to a unique subset of the firstplurality of conductive terminals; applying, by the first pair ofelectrodes, a first voltage to the first semiconductor die within thefirst mold compound; and applying, by the second pair of electrodes, asecond voltage to the first semiconductor die within the first moldcompound.
 17. The method of claim 16, wherein positioning furthercomprises positioning using a pick-up head of a turret-type devicehandler.
 18. The method of claim 16, wherein moving further comprisesmoving the movable electrode of the first and second pairs of electrodesvertically.
 19. The method of claim 16, further comprising: afterapplying the first and second voltages, moving the movable electrode ofthe first and second pairs of electrodes into an open position, whereinin the open position at least one of each of the first and second pairsof electrodes is not in contact with the first plurality of conductiveterminals; and removing the first mold compound from the electrodes. 20.The method of claim 19, further comprising: covering a secondsemiconductor die and a second plurality of conductive terminals coupledto the second semiconductor die in a second mold compound; positioningthe second mold compound between the first pair of electrodes and thesecond pair of electrodes; moving the movable electrode of the firstpair and the movable electrode of the second pair into a second clampingposition, wherein in the second clamping position each of the first pairof electrodes and the second pair of electrodes electrically couples toa unique subset of the second plurality of conductive terminals;applying, by the first pair of electrodes, a first voltage to the secondsemiconductor die within the second mold compound; and applying, by thesecond pair of electrodes, a second voltage to the second semiconductordie within the second mold compound; wherein the second voltage is lessthan the first voltage; and wherein a height of the conductive terminalsof the second mold compound is different than a height of the conductiveterminals of the first mold compound.
 21. The method of claim 20,wherein a distance between each of the first pair of electrodes and thesecond pair of electrodes in the first clamping position is differentthan a distance between each of the first pair of electrodes and thesecond pair of electrodes in the second clamping position.
 22. Themethod of claim 16, wherein: the first voltage is approximately equal to1 to 20 kV; and the second voltage is approximately equal to a voltageat a ground node.
 23. A system, comprising: a first pair of electrodesand a second pair of electrodes configured to receive a semiconductordie and a plurality of conductive terminals coupled to the semiconductordie in a mold compound, each of the first and second pairs of electrodescomprising a movable electrode; wherein the movable electrode of thefirst and second pairs of electrodes is configured to move between anopen position and a clamping position, wherein in the clamping positioneach of the first pair of electrodes and the second pair of electrodeselectrically couples to a unique subset of the first plurality ofconductive terminals; wherein the first pair of electrodes is configuredto apply a first voltage to the semiconductor die within the moldcompound; and wherein the second pair of electrodes is configured toapply a second voltage to the semiconductor die within the moldcompound.
 24. The system of claim 23, wherein: the first pair ofelectrodes comprises an inner face facing the second pair of electrodes;the second pair of electrodes comprises an inner face facing the firstpair of electrodes; and a profile of each inner face comprises a Bordaprofile.
 25. The system of claim 23, wherein: the first pair ofelectrodes comprises an inner face facing the second pair of electrodes;the second pair of electrodes comprises an inner face facing the firstpair of electrodes; and a profile of each inner face comprises aRogowski profile.
 26. The system of claim 23 wherein: the first pair ofelectrodes comprises an inner face facing the second pair of electrodes;the second pair of electrodes comprises an inner face facing the firstpair of electrodes; and a profile of each inner face comprises acurvilinear profile.
 27. The system of claim 23, wherein the movableelectrode of the first and second pairs of electrodes is configured movevertically between the open position and the clamping position.
 28. Thesystem of claim 23, wherein: the movable electrode of each of the firstand second pairs of electrodes is configured to move between an openposition and at least a first and second clamping position; and adistance between each of the first pair of electrodes and the secondpair of electrodes in the first clamping position is different than adistance between each of the first pair of electrodes and the secondpair of electrodes in the second clamping position.
 29. The system ofclaim 23, further comprising a turret-type device handler comprising apick-up head configured to: position the mold compound between the firstand second pairs of electrodes; and remove the mold compound frombetween the first and second pairs of electrodes.
 30. The system ofclaim 23, wherein: the first voltage is approximately equal to 1 to 20kV; and the second voltage is approximately equal to a voltage at aground node.
 31. A system, comprising: movable electrodes of first andsecond pairs of electrodes configured to move between an open positionand a clamping position, wherein in the clamping position each of thefirst pair of electrodes and the second pair of electrodes electricallycouples to a unique subset of the first plurality of conductiveterminals; wherein the first pair of electrodes is configured to apply afirst voltage to the semiconductor die within the mold compound; andwherein the second pair of electrodes is configured to apply a secondvoltage to the semiconductor die within the mold compound.
 32. A system,comprising: a first pair of electrodes and a second pair of electrodesconfigured to receive a semiconductor die and a plurality of conductiveterminals coupled to the semiconductor die in a mold compound, each ofthe first and second pairs of electrodes comprising a movable electrode;and wherein the movable electrode of the first and second pairs ofelectrodes is configured to move between an open position and a clampingposition, wherein in the clamping position each of the first pair ofelectrodes and the second pair of electrodes electrically couples to aunique subset of the first plurality of conductive terminals.
 33. Amethod, comprising: covering a first semiconductor die and a firstplurality of conductive terminals coupled to the first semiconductor diein a first mold compound; positioning the first mold compound between afirst pair of electrodes and a second pair of electrodes; and moving amovable electrode of the first pair and a movable electrode of thesecond pair into a first clamping position, wherein in the firstclamping position each of the first pair of electrodes and the secondpair of electrodes electrically couples to a unique subset of the firstplurality of conductive terminals.
 34. A method of manufacturing asemiconductor package, the method comprising: positioning a moldcompound between a first pair of electrodes and a second pair ofelectrodes; moving a movable electrode of the first pair of electrodesand a movable electrode of the second pair of electrodes into a firstclamping position, wherein in the first clamping position each of thefirst pair of electrodes and the second pair of electrodes electricallycouples to a unique subset of the first plurality of conductiveterminals; applying, by the first pair of electrodes, a first voltage tothe first semiconductor die within the mold compound; and applying, bythe second pair of electrodes, a second voltage to the firstsemiconductor die within the mold compound.